PROB-PO2-0128In situ ion beam analyses for ion track experiments

PROB - Understanding modifications of solids induced by probing ions
M. Karlusic 1, K. Tomic 1, I. Bozicevic Mihalic 2, Z. Siketic 2, I. Zamboni 3, M. Jaksic 2, S. Fazinic 2.
1Rudjer Boskovic Insitute, Division of Materials Physics - Zagreb (Croatia), 2Rudjer Boskovic Insitute, Division of Experimental Physics - Zagreb (Croatia), 3University Hospital Centre Zagreb, Department of Medical Physics - Zagreb (Croatia)

Abstract content

Dense electronic excitation in the wake of the swift heavy ion can lead to nanoscale material damage along ion trajectory called ion track. In the present contribution, we demonstrate possibilities for ion beam analysis of ion tracks at Zagreb accelerator facility.

In the first example, we demonstrate how in situ approach can provide insight into prompt processes occurring during swift heavy ion interaction with matter. Results of high-resolution particle induced X-ray spectroscopy (HR-PIXE) can be used to study processes on the femtosecond timescale after ion impact. This approach could offer glimpse into most early stages of electronic excitation processes [2].

Second example demonstrates how in situ approach can provide valuable data complementary to other techniques. Time-of-flight elastic recoil detection analysis (ToF-ERDA) was used to study surface elemental composition during grazing incidence swift heavy ion irradiation. While atomic force microscopy (AFM) reveals significant differences in morphology of ion tracks on Al2O3 and MgO surfaces, ToF-ERDA excludes preferential material ejection as observed previously in cases of GaN and TiO2 [3, 4].

In the third example, in situ Rutherford backscattering spectroscopy in channeling (RBS/c) can be used for rapid analysis of structural changes undergoing ion irradiation, thus saving valuable beamtime. This recently developed setup facilitates ion track measurements, and also enables precise measurements of ion track formation in channeling and near channeling conditions [1, 5]. We demonstrate possibilities of this approach by reporting here results of our investigations on ion tracks in quartz SiO2 [1] and silicon.



[1] M. Karlušić et al., Monitoring ion track formation using in situ RBSc, ToF-ERDA, and HR-PIXE, Materials 10 (2017) 1041.

[2] N. Medvedev et al., Femto-clock for the electron kinetics in swift-heavy ion tracks, J. Phys. D: Appl. Phys. 50 (2017) 445302.

[3] M. Karlušić et al., Response of GaN to energetic ion irradiation: conditions for ion track formation, J. Phys. D: Appl. Phys. 48 (2015) 325304.

[4] M. Karlušić et al., Formation of swift heavy ion tracks on a rutile TiO2 (001) surface, J. Appl. Cryst. 49 (2016) 1704.

[5] M. Karlušić et al., Swift heavy ion track formation in SrTiO3 and TiO2 under random, channeling and near-channeling conditions, J. Phys. D: Appl. Phys. 50 (2017) 205302.